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Diodes Semiconductor Electronic Components Datasheet

DMP10H4D2S Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

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Product Summary
V(BR)DSS
100V
RDS(ON)
4.2Ω @ VGS = -10V
5.0Ω @ VGS = -4.0V
ID
TA = +25°C
-0.27A
-0.24A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high-efficiency power management
applications.
Applications
DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
SOT23
DMP10H4D2S
100V P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (Approximate)
DD
GS
G
ESD PROTECTED
Top View
Top View
Pin Configuration
Gate Protection
Diode
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMP10H4D2S-7
DMP10H4D2S-13
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
P10
Date Code Key
Year
Code
Month
Code
2015
C
Jan
1
2016
D
Feb Mar
23
DMP10H4D2S
Document number: DS37891 Rev. 2 - 2
P10 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
2017
E
Apr
4
2018
F
May Jun
56
2019
G
Jul
7
Aug
8
2020
H
Sep
9
1 of 6
www.diodes.com
2021
I
2022
J
Oct Nov Dec
OND
September 2015
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMP10H4D2S Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = -10V
Pulsed Drain Current (10μs Pulse, Duty Cycle 1%)
Maximum Body Diode Continuous Current (Note 6)
Steady
State
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IDM
IS
DMP10H4D2S
Value
-100
±20
-0.27
-0.21
-1.0
-0.42
Units
V
V
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Steady
State
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 6)
Symbol
PD
RθJA
RθJA
RθJC
TJ, TSTG
Value
0.38
0.44
333
282
115
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol Min Typ Max
BVDSS -100
IDSS

1
IGSS   ±10
VGS(TH) -1.0 -2.3 -3.0
2.8 4.2
RDS(ON)

3.2
5.0
VSD -0.82 -1.3
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
Qrr
87
5.6
2.9
 15.3
1.8
0.3
0.5
3.3
2.6
 8.4
 4.9
 17.8
 24.8





Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Unit
Test Condition
V VGS = 0V, ID = -250µA
µA VDS = -100V, VGS = 0V
μA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = -250µA
VGS = -10V, ID = -0.5A
VGS = -4.0V, ID = -0.1A
V VGS = 0V, IS = -0.2A
pF
VDS = -25V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
nC VDS = -80V, VGS = -10V,
ID = -0.5A
ns
VDS = -50V, ID = -0.5A,
VGS = -10V, RG = 10
ns VR = -100V, IF = -1.0A, di/dt =
nC 100A/µs
DMP10H4D2S
Document number: DS37891 Rev. 2 - 2
2 of 6
www.diodes.com
September 2015
© Diodes Incorporated



Part Number DMP10H4D2S
Description P-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 6 Pages
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