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Diodes Semiconductor Electronic Components Datasheet

DMP2040UVT Datasheet

P-Channel MOSFET

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DMP2040UVT
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
-20V
RDS(ON) Max
38m@ VGS = -4.5V
52m@ VGS = -2.5V
ID
TA = +25°C
-5.5A
-5.0A
Features and Benefits
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
DC-DC Converters
Motor Control
Power Management Functions
Analog Switch
TSOT26
D1
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.013 grams (Approximate)
D
6D
Top View
D2
G3
5D
4S
Top View
Pin-Out
G
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMP2040UVT-7
DMP2040UVT-13
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Date Code Key
Year
Code
Month
Code
2017
E
Jan
1
A20TP4
AT4 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: E = 2017)
M = Month (ex: 9 = September)
2018
F
Feb
2
2019
G
Mar
Apr
3
4
2020
H
May
5
2021
I
Jun
6
2022
J
Jul
Aug
7
8
2023
K
Sep
9
2024
L
Oct
Nov
O
N
2025
M
Dec
D
DMP2040UVT
Document number: DS40060 Rev. 2 - 2
1 of 7
www.diodes.com
November 2017
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMP2040UVT Datasheet

P-Channel MOSFET

No Preview Available !

DMP2040UVT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
TA = +25°C
TA = +70°C
ID
-5.5
-4.5
A
Continuous Drain Current (Note 7) VGS = -4.5V
Steady
State
TC = +25°C
TC = +70°C
ID
-13
-10
A
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
IDM
-40
A
Continuous Source-Drain Diode Current (Note 6)
IS
-2.2
A
Avalanche Current (Note 8) L = 0.1mH
IAS
-16
A
Avalanche Energy (Note 8) L = 0.1mH
EAS
13.5
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
TA = +25°C
Steady State
TA = +25°C
Steady State
Steady State
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
1.2
105
1.5
80
16
-55 to +150
Unit
W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics (TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min
BVDSS
-20
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
-0.6
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Typ
27
38
-0.7
834
133
105
4.9
8.6
19
1.5
2.5
5.8
7.7
28.1
14.6
9.8
2.7
Max
-1
±100
-1.5
38
52
-1.2
Unit
Test Condition
V
VGS = 0V, ID = -250µA
µA VDS = -16V, VGS = 0V
nA VGS = ±12V, VDS = 0V
V
VDS = VGS, ID = -250µA
mΩ VGS = -4.5V, ID = -8.9A
VGS = -2.5V, ID = -6.9A
V
VGS = 0V, IS = -2.9A
pF
VDS = -10V, VGS = 0V,
f = 1.0MHz
Ω VDS = 0V, VGS = 0V, f = 1.0MHz
nCVDS = -6V, ID = -8.9A
ns
VDD = -6V, RL = 6Ω
VGS = -4.5V, RG = 6Ω, ID = -1A
ns IF = -8.9A, di/dt = -100A/μs
nC IF = -8.9A, di/dt = -100A/μs
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
DMP2040UVT
Document number: DS40060 Rev. 2 - 2
2 of 7
www.diodes.com
November 2017
© Diodes Incorporated


Part Number DMP2040UVT
Description P-Channel MOSFET
Maker Diodes
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