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DMP2215L Datasheet

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Features
DMP2215L
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Mechanical Data
Low On-Resistance:
RDS(ON) < 100m@ VGS = -4.5V, ID = -2.7A
RDS(ON) < 215m@ VGS = -2.5V, ID = -2.0A
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 4)
Qualified to AEC-Q101 Standards for High Reliability
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.008 grams (approximate)
SOT-23
Drain
D
Gate
TOP VIEW
Source
EQUIVALENT CIRCUIT
GS
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Steady
State
Pulsed Drain Current (Note 3)
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
IDM
Value
-20
±12
-2.7
-2
8
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
1.08
115
-55 to +150
Notes:
1. Device mounted on FR-4 PCB. t 5 sec.
2. No purposefully added lead.
3. Pulse width 10μS, Duty Cycle 1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Units
W
°C/W
°C
www.DataSheet4U.com
DMP2215L
Document number: DS31125 Rev. 7 - 2
1 of 5
www.diodes.com
July 2009
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMP2215L Datasheet

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

No Preview Available !

DMP2215L
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
BVDSS
IDSS
On-State Drain Current
ID(ON)
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
IGSS
VGS(th)
Static Drain-Source On-Resistance
RDS (ON)
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
Notes: 5. Short duration pulse test used to minimize self-heating effect.
Min
-20
-6
-3
-0.45
Typ
80
165
4
250
88
58
12
4.3
0.9
2.1
Max
-800
±80
-1.25
100
215
-1.26
16
5.3
Unit Test Condition
V VGS = 0V, ID = -250μA
nA VDS = -20V, VGS = 0V
A
VDS -5V, VGS = -4.5V
VDS -5V, VGS = -2.5V
nA VGS = ±12V, VDS = 0V
V VDS = VGS, ID = -250μA
mΩ VGS = -4.5V, ID = -2.7A
VGS = -2.5V, ID = -2.0A
S VDS = -5V, ID = -2.7A
V VGS = 0V, IS = -2.7A
pF
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
pF
Ω VGS = 0V, VDS = 0V, f = 1MHz
nC VGS = -4.5V, VDS = -10V,
ID = -2.7A
VDS = -5V
Pulsed
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
www.DataSheet4U.com
DMP2215L
Document number: DS31125 Rev. 7 - 2
2 of 5
www.diodes.com
July 2009
© Diodes Incorporated



Part Number DMP2215L
Description P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Maker Diodes
Total Page 5 Pages
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