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DMP2240UWQ Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP2240UWQ
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
V(BR)DSS
-20V
RDS(ON) max
150mΩ @ VGS = -4.5V
200mΩ @ VGS = -2.5V
240mΩ @ VGS = -1.8V
ID max
TA = 25°C
-1.5A
-1A
-0.9A
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Backlighting
Power Management Functions
DC-DC Converters
Features
Low On-Resistance
Very Low Gate Threshold Voltage VGS(th) ≤ 1V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT-323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram Below
Terminals: Finish Matte Tin Annealed over Alloy 42
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (Approximate)
SOT-323
D rain
D
Top View
G ate
S o u rce
Internal Schematic
GS
Top View
Ordering Information (Note 5)
Notes:
Part Number
DMP2240UWQ-7
Case
SOT-323
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DMV
DMV = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2014
B
Jan
1
2015
C
Feb Mar
23
DMP2240UWQ
Document number: DS37585 Rev. 1 - 2
2016
D
Apr
4
2017
E
May
5
Jun
6
1 of 5
www.diodes.com
2018
F
2019
G
Jul Aug Sep
78 9
2020
H
2021
I
Oct Nov Dec
OND
November 2014
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMP2240UWQ Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

DMP2240UWQ
Maximum Ratings (@TA = +25°C unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 6)
Pulsed Drain Current
Characteristic
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IDM
Value
-20
±12
-1.5
-1.0
-5
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RJA
TJ, TSTG
Value
250
500
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
TJ = +25°C
TJ = +125°C
Static Drain-Source On-Resistance
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
Min
-20
-0.45
Typ
92
134
180
Max
-1.0
-5.0
100
-1.0
150
200
240
Forward Transconductance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
gFS
VSD
Ciss
Coss
Crss
tD(on)
tr
tD(off)
tf
3.1
  -0.9
320
80
60
 12.5
 10.3
 46.5
 22.2




Notes:
6. Device mounted on FR-4 substrate PC board, 2oz. Copper, with minimum recommended pad layout.
7. Short duration pulse test used to minimize self-heating effect.
Unit
V
A
nA
V
m
S
V
pF
pF
pF
ns
ns
ns
ns
Test Condition
VGS = 0V, ID = -250A
VDS = -20V, VGS = 0V
VGS = 12V, VDS = 0V
VDS = VGS, ID = -250A
VGS = -4.5V, ID = -2.0A
VGS = -2.5V, ID = -1.5A
VGS = -1.8V, ID = -0.5A
VDS = -10V, ID = -810mA
VGS = 0V, IS = -0.5A
VDS = -16V, VGS = 0V
f = 1.0MHz
VDS = -10V, VGS = -4.5V,
RL = 10Ω, RG = 1.0Ω
VGS = -3.0V
VGS = -2.0V
VDS = -10V
VGS = -1.8V
VGS = -1.6V
VGS = -1.2V
VGS = -1.4V
VGS = -1.0V
TA = 125°C
TA = 25°C
TA = -55°C
DMP2240UWQ
Document number: DS37585 Rev. 1 - 2
2 of 5
www.diodes.com
November 2014
© Diodes Incorporated



Part Number DMP2240UWQ
Description P-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 5 Pages
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