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Diodes Semiconductor Electronic Components Datasheet

DMP22D6UT Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP22D6UT
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected Gate
"Green" Device (Note 4)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
SOT-523
Case: SOT-523
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Matte Tin annealed over Alloy 42 Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.002 grams (approximate)
Drain
D
Gate
ESD PROTECTED
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Steady
State
Pulsed Drain Current (Note 3)
TA = 25°C
TA = 85°C
Gate
Protection
Diode
Source
Equivalent Circuit
Symbol
VDSS
VGSS
ID
IDM
Value
-20
±8
-430
-310
-750
GS
TOP VIEW
Units
V
V
mA
mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
150
833
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Min
Typ
Max Unit
Test Condition
BVDSS
IDSS
IGSS
-20
⎯ ⎯ V VGS = 0V, ID = -250mA
-1.0 μA VDS = -20V, VGS = 0V
⎯ ±1.0 μA VGS = ±4.5V, VDS = 0V
VGS(th)
-0.5
-1.0
V VDS = VGS, ID = -250μA
0.7 1.1
VGS = -4.5V, ID = -430mA
RDS (ON)
1.1 1.6
1.7 2.6
Ω VGS = -2.5V, ID = -300mA
VGS = -1.8V, ID = -150mA
|Yfs| 200
ms VDS =10V, ID = 0.2A
VSD
-1.4
V VGS = 0V, IS = -115mA
Ciss
Coss
Crss
175 pF
30
pF
VDS = -16V, VGS = 0V
f = 1.0MHz
20 pF
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width 10μS, Duty Cycle 1%
4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
DMP22D6UT
Document number: DS31585 Rev. 2 - 2
1 of 4
www.diodes.com
November 2008
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMP22D6UT Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

DMP22D6UT
0
0
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
TA, AMBIENT TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage vs. Ambient Temperature
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 6 Static Drain-Source On-Resistance vs.
Drain-Source Current
10
DMP22D6UT
Document number: DS31585 Rev. 2 - 2
2 of 4
www.diodes.com
November 2008
© Diodes Incorporated


Part Number DMP22D6UT
Description P-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 4 Pages
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