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DMT2004UFG - N-Channel MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Backlighting Power Management Functions DC-DC Converters Mechanical Data

Key Features

  • Low RDS(ON).
  • ensures on state losses are minimized.
  • Small form factor thermally efficient package enables higher density end products.
  • Occupies just 33% of the board area occupied by SO-8 enabling smaller end product.
  • 100% Unclamped Inductive Switch (UIS) Test in Production.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Summary BVDSS 24V RDS(ON) max 5.0mΩ @ VGS = 10V 6.5mΩ @ VGS = 4.5V 10.0mΩ @ VGS = 2.5V ID max TC = +25°C 70A 60A 45A DMT2004UFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features and Benefits  Low RDS(ON) – ensures on state losses are minimized  Small form factor thermally efficient package enables higher density end products  Occupies just 33% of the board area occupied by SO-8 enabling smaller end product  100% Unclamped Inductive Switch (UIS) Test in Production  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.