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Diodes Semiconductor Electronic Components Datasheet

DMT3002LPS Datasheet

N-CHANNEL MOSFET

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Green DMT3002LPS
30V N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI
Product Summary
BVDSS
30V
RDS(ON)
1.6mΩ @ VGS = 10V
ID
TC = +25°C
100A
Description
This new generation N-Channel Enhancement Mode MOSFET is
designed to minimize RDS(ON), yet maintain superior switching
performance. This device is ideal for use in power management and
load switch.
Features
Thermally Efficient Package Cooler Running Applications
<1.1mm Package Profile Ideal for Thin Applications
High Conversion Efficiency
Low RDS(ON) Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
DC-DC Converters
Load Switch
PowerDI5060-8
Mechanical Data
Case: PowerDI®5060-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
Pin1
SD
SD
SD
GD
Top View
Bottom View
Internal Schematic
Top View
Pin Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMT3002LPS-13
Case
PowerDI5060-8
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DDDD
T3002LS
YY WW
= Manufacturer’s Marking
T3002LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 16 = 2016)
WW = Week (01 to 53)
PowerDI is a registered trademark of Diodes Incorporated.
DMT3002LPS
Document number: DS38283 Rev. 4 - 2
SS SG
1 of 7
www.diodes.com
June 2016
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMT3002LPS Datasheet

N-CHANNEL MOSFET

No Preview Available !

DMT3002LPS
Maximum Ratings (@TC = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS = 10V (Note 7)
Steady
State
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Avalanche Current, L=3mH (Note 8)
Avalanche Energy, L=3mH (Note 8)
TC = +25°C
TC = +70°C
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
Value
30
±16
100
100
100
150
15
700
Unit
V
V
A
A
A
A
mJ
Thermal Characteristics (@TC = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
TA = +25°C
Steady State
TA = +25°C
Steady State
TC = +25°C
Symbol
PD
RθJA
PD
RθJA
PD
RθJC
TJ, TSTG
Value
1.2
103
2.5
51
136
1.1
-55 to +150
Units
W
°C/W
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TC = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min Typ Max
BVDSS
IDSS
IGSS
30
——
1
±100
VGS(TH)
RDS(ON)
VSD
1
2
1.25 1.6
2 2.5
0.8 1.1
CISS
COSS
CRSS
RG
QG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
5,000
2,660
300
0.75
37
77
10
14
21
45
32
26
44
52
Unit
Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 24V, VGS = 0V
nA VGS = ±16V, VDS = 0V
V VDS = VGS, ID = 1mA
mVGS = 10V, ID = 25A
VGS = 4.5V, ID = 25A
V VGS = 0V, IS = 25A
pF
VDS = 15V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC VDS = 15V, ID = 25A
ns
VDD = 15V, VGS = 4.5V,
ID = 25A, RG = 4.7
ns
nC
IS = 15A, di/dt = 100A/μs
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
DMT3002LPS
Document number: DS38283 Rev. 4 - 2
2 of 7
www.diodes.com
June 2016
© Diodes Incorporated


Part Number DMT3002LPS
Description N-CHANNEL MOSFET
Maker Diodes
Total Page 7 Pages
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