DMT3009LFVWQ
DMT3009LFVWQ is 30V N-CHANNEL MOSFET manufactured by Diodes Incorporated.
Features and Benefits
BVDSS 30V
RDS(ON) Max 11m @ VGS = 10V 13m @ VGS = 4.5V
ID Max TC = +25°C
50A
45A
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- Backlighting
- Power Management Functions
- DC-DC Converters
- Low RDS(ON)
- Ensures On State Losses Are Minimized
- 100% Unclamped Inductive Switching (Test in Production)
- Ensures More Reliable
- Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
- Occupies Just 33% of The Board Area Occupied by SO-8
Enabling Smaller End Product
- Wettable Flank for Improved Optical Inspection
- Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- Qualified to AEC-Q101 Standards for High Reliability
- PPAP Capable (Note 4)
Mechanical Data
- Case: Power DI®3333-8 (SWP) (Type UX)
- Case Material: Molded Plastic, "Green" Molding pound.
UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Connections Indicator: See Diagram
- Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
- Weight: 0.03 grams (Approximate)
Power DI3333-8 (SWP) (Type UX)
Top View
Pin1
Bottom...
