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DMT3009LDT - N-Channel MOSFET

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

General Purpose Interfacing Switch Power Management Functions DMT300

Key Features

  • Low Gate Threshold Voltage.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen- and Antimony-Free. “Green” Device (Note 3).
  • For automotive.

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Full PDF Text Transcription for DMT3009LDT (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMT3009LDT. For precise diagrams, tables, and layout, please refer to the original PDF.

Product Summary Device BVDSS Q1 & Q2 30V RDS(ON) Max 11.1mΩ @ VGS = 10V 13.8mΩ @ VGS = 4.5V 22.0mΩ @ VGS = 3.8V ID Max TC = +25°C (Note 10) 30A 28A 22A Description This n...

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VGS = 3.8V ID Max TC = +25°C (Note 10) 30A 28A 22A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications • General Purpose Interfacing Switch • Power Management Functions DMT3009LDT N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits • Low Gate Threshold Voltage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen- and Antimony-Free. “Green” Device (Note 3) • For automotive applications requiring specific change control (i.e.