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DMT3009LEV - N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

General Purpose Interfacing Switch Power Management Functions Mechanical Dat

Key Features

  • Low Gate Threshold Voltage.
  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AADDVVNAAENNCWCEEPD IRNINOENFDFWOUORPCRRTMMOAADTTIIUOCONTN Product Summary Device BVDSS Q1 & Q2 30V RDS(ON) Max 12mΩ @ VGS = 10V 20mΩ @ VGS = 4.5V 25mΩ @ VGS = 3.8V ID Max TC = +25°C (Note 10) 20A 17A 15A DMT3009LEV N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  Low Gate Threshold Voltage  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.