DMT3009UDT - DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes Incorporated

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Key Features

Ultra Low Gate Threshold Voltage.
Low On-Resistance.
Low Input Capacitance.
Fast Switching Speed.
ESD Protected Gate.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).
For automotive.

📥 Download Datasheet

DMT3009UDT dual n-channel enhancement mode mosfet by Diodes Incorporated - Datasheet Preview

Datasheet Details

Part number	DMT3009UDT
Manufacturer	Diodes Incorporated
File Size	395.75 KB
Description	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet	DMT3009UDT Datasheet

More Datasheets from Diodes Incorporated

Part Number	Description
DMT3009UFVW	30V N-CHANNEL MOSFET
DMT3009LDT	N-Channel MOSFET
DMT3009LEV	N-CHANNEL ENHANCEMENT MODE MOSFET
DMT3009LFVW	30V N-Channel MOSFET
DMT3009LFVWQ	30V N-CHANNEL MOSFET
DMT3002LPS	30V N-CHANNEL MOSFET
DMT3003LFG	N-CHANNEL MOSFET
DMT3003LFGQ	30V N-CHANNEL MOSFET
DMT3004LFG	N-CHANNEL MOSFET
DMT3004LPS	N-Channel MOSFET

Full PDF Text Transcription for DMT3009UDT (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMT3009UDT. For precise diagrams, tables, and layout, please refer to the original PDF.

ADVANCED INFORMATION DMT3009UDT DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Device BVDSS Q1& Q2 30V RDS(ON) Max 11.1mΩ @ VGS = 10V 15.0mΩ @ VGS = 4.5V ID Max T...

View more extracted text

Q1& Q2 30V RDS(ON) Max 11.1mΩ @ VGS = 10V 15.0mΩ @ VGS = 4.5V ID Max TC = +25°C 30A 25A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits  Ultra Low Gate Threshold Voltage  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.