DMT3009UDT
DMT3009UDT is DUAL N-CHANNEL ENHANCEMENT MODE MOSFET manufactured by Diodes Incorporated.
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features and Benefits
- Ultra Low Gate Threshold Voltage
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- ESD Protected Gate
- Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://.diodes./quality/product-definitions/
Applications
- General Purpose Interfacing Switch
- Power Management Functions
Mechanical Data
- Case: V-DFN3030-8
- Case Material: Molded Plastic, “Green” Molding pound.
UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish
- Ni Pd Au over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4
- Weight: 0.02 grams (Approximate)
ESD PROTECTED
V-DFN3030-8 (Type KS)
PIN 1 PIN 1 Top View
Bottom View
S2 S2 S2 G2
D1
D2
S1/D2
G1
G2
D1
4321 D1 D1 D1 G1
PIN 1 Gate Protection
Diode
S1
Gate Protection...
