Datasheet4U Logo Datasheet4U.com

DMT3009UDT - DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Features

  • Ultra Low Gate Threshold Voltage.
  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

📥 Download Datasheet

Datasheet preview – DMT3009UDT

Datasheet Details

Part number DMT3009UDT
Manufacturer DIODES
File Size 395.75 KB
Description DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DMT3009UDT Datasheet
Additional preview pages of the DMT3009UDT datasheet.

📁 Similar Datasheet

Other Datasheets by DIODES

Full PDF Text Transcription

Click to expand full text
ADVANCED INFORMATION DMT3009UDT DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Device BVDSS Q1& Q2 30V RDS(ON) Max 11.1mΩ @ VGS = 10V 15.0mΩ @ VGS = 4.5V ID Max TC = +25°C 30A 25A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits  Ultra Low Gate Threshold Voltage  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.
Published: |