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DMT3009LFVW - 30V N-Channel MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Key Features

  • Low RDS(ON).
  • Ensures On State Losses Are Minimized.
  • Small Form Factor Thermally Efficient Package Enables Higher Density End Products.
  • Occupies Just 33% of The Board Area Occupied by SO-8 Enabling Smaller End Product.
  • Wettable Flank for Improved Optical Inspection.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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Full PDF Text Transcription for DMT3009LFVW (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMT3009LFVW. For precise diagrams, tables, and layout, please refer to the original PDF.

AADDVVAANNACCDEEVDDA IINNNCFFEOOIRRNMMFAAOTTRIIMOOANNTION DMT3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary BVDSS RDS(ON) Max 11m @ VGS = 1...

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MOSFET PowerDI3333-8 Product Summary BVDSS RDS(ON) Max 11m @ VGS = 10V 30V 13m @ VGS = 4.5V ID Max TC = +25°C 50A 45A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.