Datasheet4U Logo Datasheet4U.com

DMT3009LFVW - 30V N-Channel MOSFET

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Features

  • Low RDS(ON).
  • Ensures On State Losses Are Minimized.
  • Small Form Factor Thermally Efficient Package Enables Higher Density End Products.
  • Occupies Just 33% of The Board Area Occupied by SO-8 Enabling Smaller End Product.
  • Wettable Flank for Improved Optical Inspection.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

📥 Download Datasheet

Datasheet preview – DMT3009LFVW

Datasheet Details

Part number DMT3009LFVW
Manufacturer DIODES
File Size 727.68 KB
Description 30V N-Channel MOSFET
Datasheet download datasheet DMT3009LFVW Datasheet
Additional preview pages of the DMT3009LFVW datasheet.

📁 Similar Datasheet

Other Datasheets by DIODES

Full PDF Text Transcription

Click to expand full text
AADDVVAANNACCDEEVDDA IINNNCFFEOOIRRNMMFAAOTTRIIMOOANNTION DMT3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary BVDSS RDS(ON) Max 11m @ VGS = 10V 30V 13m @ VGS = 4.5V ID Max TC = +25°C 50A 45A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Published: |