DMT3009UFVW Datasheet (PDF) Download
Diodes Incorporated
DMT3009UFVW

Description

and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Key Features

  • Ultra Low Gate Threshold Voltage
  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Wettable Flank for Improved Optical Inspection
  • ESD Protected Gate
  • 100% Unclamped Inductive Switching (UIS) Test in Production - Ensures More Reliable and Robust End Application
  • Totally Lead-Free & Fully RoHS pliant (Notes 1 &
  • Halogen and Antimony Free. “Green” Device (Note