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DMT8012LFG - N-Channel MOSFET

General Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Synchronous Rectifier Backlighting Power Management Functions

Key Features

  • Low RDS(ON).
  • ensures on state losses are minimized.
  • Excellent Qgd x RDS(ON) Product (FOM).
  • Advanced Technology for DC/DC converts.
  • Small form factor thermally efficient package enables higher density end products.
  • Occupies just 33% of the board area occupied by SO-8 enabling smaller end product.
  • 100% UIS (Avalanche) rated.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” De.

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Full PDF Text Transcription for DMT8012LFG (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMT8012LFG. For precise diagrams, and layout, please refer to the original PDF.

ADVNAENWCEP IRNNOEFDWOURPCRTMOADTIUOCNT DMT8012LFG N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 80V RDS(ON) max 16mΩ @ VGS = 10V 22mΩ @ VGS = 6V ID max TC =...

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V(BR)DSS 80V RDS(ON) max 16mΩ @ VGS = 10V 22mΩ @ VGS = 6V ID max TC = +25°C 35A 30A Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

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