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FMMT494Q - 120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

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FMMT494Q 120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 Feature This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Feature  BVCEO > 120V  IC = 1A Continuous Collector Current  ICM = 2A Peak Pulse Current  500mW Power Dissipation  hFE characterised up to 1A for high current gain hold up  Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP capable (Note 4) Mechanical Data  Case: SOT23 (Type DN)  Case Material: Molded Plastic, “Green” Molding Compound.
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