FZT1051A Datasheet - Diodes

NPN MEDIUM POWER HIGH GAIN TRANSISTOR

* BVCEO > 40V

* IC = 5A High Continuous Collector Current

* ICM = 20A Peak Pulse Current

* Low Saturation Voltage VCE(sat) < 120mV @ 1A

* RSAT = 50mΩ @ 5A for a Low Equivalent On-Resistance

* hFE Specified up to 10A for a High Gain Hold-Up

* Complementary PNP Type: FZT115

FZT1051A

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Npn medium power high gain transistor.

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FZT1051A NPN MEDIUM POWER HIGH GAIN TRANSISTOR Diodes

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