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ZXTNS618MC - 20V NPN LOW SATURATION TRANSISTOR AND 1A SCHOTTKY DIODE COMBINATION

Features

  • NPN Transistor.
  • BVCEO > 20V.
  • IC = 4.5A Continuous Collector Current.
  • Low Saturation Voltage (150mV Max @ 1A).
  • RSAT = 47mΩ for a Low Equivalent On-Resistance.
  • hFE Characterized up to 6A for High Current Gain Hold up Schottky Diode.
  • BVR > 40V.
  • IFAV = 3A Average Peak Forward Current.
  • Low VF < 500mV (@ 1A) for Reduced Power Loss.
  • Fast Switching due to Schottky Barrier.
  • Low Profile 0.8mm High Package for Thin.

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Full PDF Text Transcription

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OBSOLETE – PART DISCONTINUED PART OBSOLETE - CONTACT US ZXTNS618MC 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits NPN Transistor  BVCEO > 20V  IC = 4.5A Continuous Collector Current  Low Saturation Voltage (150mV Max @ 1A)  RSAT = 47mΩ for a Low Equivalent On-Resistance  hFE Characterized up to 6A for High Current Gain Hold up Schottky Diode  BVR > 40V  IFAV = 3A Average Peak Forward Current  Low VF < 500mV (@ 1A) for Reduced Power Loss  Fast Switching due to Schottky Barrier  Low Profile 0.8mm High Package for Thin Applications  RθJA Efficient, 40% Lower than SOT26  6mm2 Footprint, 50% Smaller than TSOP6 and SOT26  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
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