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DBT151F-600 - Standard Gate SCR

General Description

Standard gate triggering thyristor is fully isolated package suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system.

Key Features

  • 3.Gate Symbol 2. Anode BVDRM = 600V IT(RMS) = 12 A ITSM = 120 A Repetitive Peak Off-State Voltage : 600V R. M. S On-State Current ( IT(RMS)= 12 A ) Low On-State Voltage (1.5V(Typ. )@ ITM) Isolation Voltage ( VISO = 2500V AC ) 1.Cathode TO-220F General.

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Datasheet Details

Part number DBT151F-600
Manufacturer DnI
File Size 641.80 KB
Description Standard Gate SCR
Datasheet download datasheet DBT151F-600 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DBT151F-600 Standard Gate Silicon Controlled Rectifiers Features 3.Gate Symbol 2. Anode BVDRM = 600V IT(RMS) = 12 A ITSM = 120 A Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 12 A ) Low On-State Voltage (1.5V(Typ.)@ ITM) Isolation Voltage ( VISO = 2500V AC ) 1.Cathode TO-220F General Description Standard gate triggering thyristor is fully isolated package suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system.