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DFF4N60 - N-Channel MOSFET

General Description

This N-channel enhancement mode field-effect power transistor using D& I semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply.

Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.

Key Features

  • High ruggedness RDS(on) (Max 2.5 )@VGS=10V 1. Gate { { { N-Channel MOSFET 2. Drain BVDSS = 600V RDS(ON) = 2.5 ohm ID = 4A 3. Source Gate Charge (Typical 25nC) Improved dv/dt Capability 100% Avalanche Tested General.

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Datasheet Details

Part number DFF4N60
Manufacturer DnI
File Size 0.98 MB
Description N-Channel MOSFET
Datasheet download datasheet DFF4N60 Datasheet

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www.DataSheet4U.com DFF4N60 N-Channel MOSFET Features High ruggedness RDS(on) (Max 2.5 )@VGS=10V 1. Gate { { { N-Channel MOSFET 2. Drain BVDSS = 600V RDS(ON) = 2.5 ohm ID = 4A 3. Source Gate Charge (Typical 25nC) Improved dv/dt Capability 100% Avalanche Tested General Description This N-channel enhancement mode field-effect power transistor using D& I semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220F( Isolated ) pkg is well suited for adaptor power unit and power inverter application.