RDS(on) (Max 0.4 )@VGS=10V Gate Charge (Typical 44nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested 2.Drain BVDSS = 200V 1.Gate RDS(ON) = 0.4 ohm ID .

This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) , low gate charge and high ru.

DFP634

DFP640

DFP1000

DFP14

DFP16

DFP2INT

DFP2N60

DFP30N06

DFP4N60

DFP50N06

DFP70N06

DFP730

DFP740