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* 2.Drain RDS(on) (Max 1 Ω )@VGS=10V Gate Charge (Typical 32nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested 1.Gate BVDS.

This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche cha.

DFP70N06

DFP740

DFP75N75

DFP7N60

DFP1000

DFP14

DFP16

DFP2INT

DFP2N60

DFP30N06

DFP4N60

DFP50N06

DFP630