1) VDS=30V,ID=5.8A,RDS(ON)<26mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent pac.

Features： 1) VDS=30V,ID=5.8A,RDS(ON)<26mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell .

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=30V,ID=5.8A,RDS(ON)<26mΩ@VGS=10V 2) Low gate charge. 3) Green devi.

3401

3402A

3402B

3402FA

3402FB

3402S

3402UFA

3402UFB

3403AD

3404

34063

34063A

34063AD