3400 Datasheet | Specifications & PDF Download

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AO3400 30V N-Channel MOSFET General Description Product Summary The AO3400 combines advanced trench MOSFET technology with a low resistance package

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World Series Contactors 3TF3 3-Pole and CRL0F3 Reversing Contactors with AC or DC Coil Ordering Information ᮣ ᮣ ᮣ Selection Coil Voltage Codes AC Vo

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SMD Type MOSFIECT N-Channel Enhancement Mode Field Effect Transistor AO3400 (KO3400) Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) 28m (VGS

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Plastic-Encapsulate Mosfets FEATURES The AO3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell den

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AO3400A 30V N-Channel MOSFET General Description Product Summary The AO3400A combines advanced trench MOSFET technology with a low resistance packa

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30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@5.8A < 28mΩ RDS(ON), Vgs@4.5V, Ids@5.0A < 33mΩ RDS(ON), Vgs@2.5V, Ids@4.0A < 52mΩ

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TOSHIBA MOS MEMORY PRODUCT 4M BIT (512K WORD X 8 Bin CMOS MASK ROM SILICON GATE CMOS TC534000P OESCR PTI ON The TC534000P is a 4,194,304 bits read

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AO3400 N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.030 at VGS = 10 V 30 0.033 at VGS = 4.5 V ID (A)a 6.5 6

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CJ3400 Feature  30V/5.8A, RDS(ON) = 35mΩ(MAX) @VGS = 10V. RDS(ON) =40mΩ(MAX) @VGS = 4.5V. RDS(ON) =55mΩ(MAX) @VGS = 2.5V.  Super High dense cell des

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Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a w

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Freescale Semiconductor Advance Information Document Number: MC35XS3400 Rev. 10.0, 8/2013 Quad High Side Switch  (Quad 35 mOhm) 35XS3400 The 35X

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Intel® 5 Series Chipset and Intel® 3400 Series Chipset Datasheet January 2012 Document Number: 322169-004 INFORMATION IN THIS DOCUMENT IS PROVIDED IN

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AiT Semiconductor Inc. www.ait-ic.com   AM3400A MOSFET 30V N-CHANNEL ENHANCEMENT MODE   DESCRIPTION The AM3400A is the N-Channel logic enhancement m

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EntréPad AES3400 FINGERPRINT SENSOR Product Family Specification Hardware Reference 2257 Rev 1.1 May 12, 2004 Sensor Shown 4X Actual Size 2257_11 12M

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( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com

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CS3400 N-Channel Trench Power MOSFET General Description The CS3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge an

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ELM33400CA-VB ELM33400CA-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.030 at VGS = 10 V 30 0.03

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MC33001/A/B MC34001/A/B MC35001/A/B GENERAL PURPOSE SINGLE JFET OPERATIONAL AMPLIFIERS . . . . . . . . LOW POWER CONSUMPTION WIDE COMMON-MODE (UP TO

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