HM3400E Overview
The HM3400E is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System Load Switch.
HM3400E Key Features
- RDS(ON)= 450 mΩ @VGS=4.5V
- RDS(ON)= 550 mΩ @VGS=2.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
- Capable doing Cu wire bonding
HM3400E Applications
- Power Management in Note book