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HM3400B Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

HM3400B Overview

The +03400% uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.

HM3400B Key Features

  • VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 41mΩ @ VGS=10V
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package

HM3400B Distributor