HM3400B Datasheet | H&M Semiconductor

+03400% N-Channel Enhancement Mode Power MOSFET DESCRIPTION The +03400% uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL Features - VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 41mΩ @ VGS=10V S Schematic diagram - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Marking and pin Assignment Application - PWM applications - Load switch - Power management SOT-23 top view Package Marking And Ordering Information Device Marking Device Device Package 3400 +03400% SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000...