Datasheet4U Logo Datasheet4U.com

HM3400DR Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

HM3400DR Overview

The HM3400DR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.

HM3400DR Key Features

  • VDS = 30V,ID = 8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 41mΩ @ VGS=10V
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package

HM3400DR Distributor