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HM3400DR

Manufacturer: H&M Semiconductor

HM3400DR datasheet by H&M Semiconductor.

HM3400DR datasheet preview

HM3400DR Datasheet Details

Part number HM3400DR
Datasheet HM3400DR-HMSemiconductor.pdf
File Size 564.87 KB
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
HM3400DR page 2 HM3400DR page 3

HM3400DR Overview

The HM3400DR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.

HM3400DR Key Features

  • VDS = 30V,ID = 8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 41mΩ @ VGS=10V
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package
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HM3400DR Distributor

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