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YJL3400A
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Feature
●VDS=30V,ID=5.6A RDS(ON)<27mΩ@VGS=10V RDS(ON)<33mΩ@VGS=4.5V RDS(ON)<59mΩ@VGS=2.5V
●Epoxy meets UL 94 V-0 flammability rating ●Moisture Sensitivity Level1 ●High density cell design for low RDS(ON) ●High Speed switching ●Rugged and reliable ●SOT-23 Package
Application
●Battery protection ●Load switch ●Power management
■ Maximum Ratings (TA=25℃ unless otherwise noted)
Symbol
Parameter
VDS
Drain-source Voltage
VGS
Gate-source Voltage
ID
Drain Current
PD
Total Power Dissipation
RthJA
Thermal Resistance From Junction To Ambient
TJ
Operation Junction Temperature
TSTG
Storage Temperature
Value 30 ±12 5.6 1.
YJL3400A Datasheet
