YJL02N10A - N-Channel Enhancement Mode Field Effect Transistor
Yangzhou Yangjie
General Description
Trench Power MV MOSFET technology
Excellent package for heat dissipation
High density cell design for low RDS(ON)
MSL LEVEL1
Applications
DC-DC Converters
Power management functions
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
P-Channel Enhancement Mode Field Effect Transistor
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YJL02N10A
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V)
100V 2A ＜280 mohm ＜300 mohm
General Description
● Trench Power MV MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) ● MSL LEVEL1
Applications
● DC-DC Converters
● Power management functions
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A
TA=25℃ TA=70℃
VDS
100
V
VGS
±20
V
2
ID
A
1.6
IDM
8
A
Total Power Dissipation @ TA=25℃ Thermal Resistance Junction-to-Ambient B
PD RθJA
1.
YJL02N10A Datasheet
