YJL02N10A - N-Channel Enhancement Mode Field Effect Transistor
Datasheet Summary
Description
Trench Power MV MOSFET technology
Excellent package for heat dissipation
High density cell design for low RDS(ON)
MSL LEVEL1
Applications
DC-DC Converters
Power management functions
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
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Full PDF Text Transcription
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YJL02N10A
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V)
100V 2A ＜280 mohm ＜300 mohm
General Description
● Trench Power MV MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) ● MSL LEVEL1
Applications
● DC-DC Converters
● Power management functions
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A
TA=25℃ TA=70℃
VDS
100
V
VGS
±20
V
2
ID
A
1.6
IDM
8
A
Total Power Dissipation @ TA=25℃ Thermal Resistance Junction-to-Ambient B
PD RθJA
1.
YJL02N10A Datasheet
