Yangzhou Yangjie YJL2302A
N-Channel Enhancement Mode Field Effect Transistor
| Part No. | YJL2302A |
|---|---|
| Datasheet | YJL2302A Download |
| Manufacturer |  Yangzhou Yangjie |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Symbol Parameter VDS Drain-source Voltage VGS Gate-source Voltage ID Drain Current IDM Pulsed Drain Current PD Total Power Dissipation RthJA Thermal Resistance From Junction To Ambient TJ Operation Junction Temperature TSTG Storage Temperature Value 20 ±10 4.3 17 1 125 -55～+150 -55～+150 Unit V V A A W ℃/W ℃ ℃● Ordering Information (Example) PREFERED P/N PACKING CODE Marking YJL2302A F2 MINIMUM PACKAGE(pcs) 3000 INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE 30000 120000 7” reel S-D007 Rev. 1.1, 30-Jan-18 1/5 Yangzhou Yangjie Electronic Technology Co., Ltd. YJL2302A
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ELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS= 0V, ID=250μA 20 Zero gate voltage drain current Gate-body leakage current IDSS IGSS VDS=20V,VGS=0V VGS= ±10V, VDS=0V Gate threshold voltage* VGS(th) VDS= VGS, ID=250μA 0.6 Drain-source on-res...
