YJL2305B - P-Channel Enhancement Mode Field Effect Transistor

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Description

Trench Power LV MOSFET technology High Density Cell Design for Low RDS(ON) High Speed switching Applications Battery protection Load switch Power management Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-so

Yangzhou Yangjie

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Datasheet Details

Part number	YJL2305B
Manufacturer	Yangzhou Yangjie
File Size	642.52 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	YJL2305B Datasheet
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YJL2305B RoHS COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=-4.5V) ● RDS(ON)( at VGS=-2.5V) ● RDS(ON)( at VGS=-1.8V) -20V -5.

Published: Mar 13, 2019 |