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YJL2312A - N-Channel Enhancement Mode Field Effect Transistor

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Trench Power LV MOSFET technology High Power and current handing capability Applications PWM application Load switch Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 20 V Gate-source Voltage VGS TA

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Datasheet Details

Part number YJL2312A
Manufacturer Yangzhou Yangjie
File Size 592.80 KB
Description N-Channel Enhancement Mode Field Effect Transistor
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YJL2312A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=4.5V) ● RDS(ON)( at VGS=2.5V) ● RDS(ON)( at VGS=1.8V) 20V 6.8A ＜18 mohm ＜22 mohm ＜39 mohm General Description ● Trench Power LV MOSFET technology ● High Power and current handing capability Applications ● PWM application ● Load switch ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 20 V Gate-source Voltage VGS TA=25℃ @ Steady State Drain Current TA=70℃ @ Steady State ID Pulsed Drain Current A IDM ±10 V 6.8 A 5.4 27 A Total Power Dissipation @ TA=25℃ PD 1.
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