Datasheet Details
| Part number | YJL2312A |
|---|---|
| Manufacturer | Yangzhou Yangjie |
| File Size | 592.80 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
 YJL2312A Datasheet
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| Part number | YJL2312A |
|---|---|
| Manufacturer | Yangzhou Yangjie |
| File Size | 592.80 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
YJL2312A Datasheet
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Trench Power LV MOSFET technology High Power and current handing capability Applications PWM application Load switch Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 20 V Gate-source Voltage VGS TA=25℃ @ Steady State Drain Current TA=70℃ @ Steady State ID Pulsed Drain Current A IDM ±10 V 6.8 A 5.4 27 A Total Power Dissipation @ TA=25℃ PD 1.2 W Thermal Resistance Junction-to-Ambie
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