YJL03N06A - N-Channel Enhancement Mode Field Effect Transistor
Datasheet Summary
Description
Trench Power MV MOSFET technology
Excellent package for heat dissipation
High density cell design for low RDS(ON)
Applications
DC-DC Converters
Power management functions
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Dr
Additional preview pages of the YJL03N06A datasheet.
📁 Similar Datasheet
Other Datasheets by Yangzhou Yangjie
YJL02N10A- N-Channel Enhancement Mode Field Effect Transistor
YJL2300A- N-Channel Enhancement Mode Field Effect Transistor
YJL2301C- P-Channel Enhancement Mode Field Effect Transistor
YJL2302A- N-Channel Enhancement Mode Field Effect Transistor
YJL2305B- P-Channel Enhancement Mode Field Effect Transistor
YJL2312A- N-Channel Enhancement Mode Field Effect Transistor
YJL3400A- N-Channel Enhancement Mode Field Effect Transistor
YJL3416A- N-Channel Enhancement Mode Field Effect Transistor
Full PDF Text Transcription
Click to expand full text
YJL03N06A
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V)
60V 3A ＜100 mohm ＜120 mohm
General Description
● Trench Power MV MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
Applications
● DC-DC Converters
● Power management functions
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage
VDS
60
V
Gate-source Voltage Drain Current Pulsed Drain Current A
TA=25℃ TA=70℃
VGS
±20
V
3
ID
A
2.4
IDM
12
A
Total Power Dissipation @ TC=25℃ Thermal Resistance Junction-to-Ambient B
PD RθJA
1.
YJL03N06A Datasheet
