YJL03N06A - N-Channel Enhancement Mode Field Effect Transistor
Yangzhou Yangjie
General Description
Trench Power MV MOSFET technology
Excellent package for heat dissipation
High density cell design for low RDS(ON)
Applications
DC-DC Converters
Power management functions
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Dr
P-Channel Enhancement Mode Field Effect Transistor
Full PDF Text Transcription (Reference)
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
YJL03N06A
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V)
60V 3A ＜100 mohm ＜120 mohm
General Description
● Trench Power MV MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
Applications
● DC-DC Converters
● Power management functions
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage
VDS
60
V
Gate-source Voltage Drain Current Pulsed Drain Current A
TA=25℃ TA=70℃
VGS
±20
V
3
ID
A
2.4
IDM
12
A
Total Power Dissipation @ TC=25℃ Thermal Resistance Junction-to-Ambient B
PD RθJA
1.
YJL03N06A Datasheet
