Yangzhou Yangjie YJL03N06A
The information presented in this document is for reference only. This publication supersedes & replaces all information previously supplied.| Part No. | YJL03N06A |
|---|---|
| Datasheet | YJL03N06A Download |
| Manufacturer |  Yangzhou Yangjie |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
GENERAL DESCRIPTION
● Trench Power MV MOSFET technology● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
APPLICATIONS
● DC-DC Converters● Power management functions
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ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 60 V Gate-source Voltage Drain Current Pulsed Drain Current A TA=25℃ TA=70℃ VGS ±20 V 3 ID A 2.4 IDM 12 A Total Power Dissipation @ TC=25℃ Thermal Resistance Junction-to-Ambient B PD RθJA 1.2 W 105 ℃/ W Junction and Storage Temperature Range● Ordering Information (Example) PREFERED P/N PACKING CODE Marking TJ ,TSTG -55～+150 ℃ MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJL03N06A F2 S10. 3000 30000 120000 7“ reel S-S1967 Rev.2.1,25-Dec-18 1/6 Yangzhou Yangjie Electronic Technology Co., Ltd. YJL03N06A
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ELECTRICAL CHARACTERISTICS
(TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Bre...
