Datasheet4U Logo Datasheet4U.com

YJL3416A - N-Channel Enhancement Mode Field Effect Transistor

General Description

Trench Power LV MOSFET technology High Power and current handing capability Applications PWM application Load switch Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current Pulse

📥 Download Datasheet

Datasheet Details

Part number YJL3416A
Manufacturer Yangzhou Yangjie
File Size 620.21 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet YJL3416A Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Yangzhou Yangjie

Part Number Description
YJL3400A N-Channel Enhancement Mode Field Effect Transistor
YJL02N10A N-Channel Enhancement Mode Field Effect Transistor
YJL03N06A N-Channel Enhancement Mode Field Effect Transistor
YJL2300A N-Channel Enhancement Mode Field Effect Transistor
YJL2301C P-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
YJL3416A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 20V ● ID ● RDS(ON)( at VGS=4.5V) ● RDS(ON)( at VGS=2.5V) ● RDS(ON)( at VGS=1.8V) 6.0A ＜18 mohm ＜22 mohm ＜39 mohm ● ESD Protected Up to 3.5KV (HBM) General Description ● Trench Power LV MOSFET technology ● High Power and current handing capability Applications ● PWM application ● Load switch ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A TA=25℃ @ Steady State TA=70℃ @ Steady State Total Power Dissipation @ TA=25℃ Thermal Resistance Junction-to-Ambient @ Steady State Junction and Storage Temperature Range VDS VGS ID IDM PD RθJA TJ ,TSTG 20 ±12 7.0 5.6 25 1.