CJ3400
Feature
- 30V/5.8A, RDS(ON) = 35mΩ(MAX) @VGS = 10V.
RDS(ON) =40mΩ(MAX) @VGS = 4.5V. RDS(ON) =55mΩ(MAX) @VGS = 2.5V.
- Super High dense cell design for extremely low RDS(ON) .
- Reliable and Rugged.
- SC-59 for Surface Mount Package.
N-Channel Enhancement Mode MOSFET
SC-59
Applications
- Power Management
Portable Equipment and Battery Powered Systems.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous
TA=25℃ Unless Otherwise noted
Symbol
VDS VGS ID
Electrical Characteristics
TA=25℃ Unless Otherwise noted
Parameter Off Characteristics
Drain to Source Breakdown Voltage
Symbol
BVDSS
Test Conditions
VGS=0V, ID=250μA
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse
IGSSF IGSSR
VGS=12V, VDS=0V VGS=-12V, VDS=0V
On Characteristics
Gate Threshold Voltage
Static Drain-source On-Resistance
VGS(th) RDS(ON)
VGS= VDS, ID=250µA
VGS...
