CJ3400-HF
Features
- N-Channel Enhancement mode field effect transistor.
- High dense cell design for extermely low RDS(ON)
- Exceptional on-resistance and maximum
DC current capability.
Mechanical data
- Case: SOT-23, molded plastic.
- Terminals: solderable per MIL-STD-750, method 2026.
Circuit diagram
D chip SMD Diode Specialist
SOT-23
0.055(1.40) 0.047(1.20)
0.118(3.00) 0.110(2.80)
12 0.079(2.00) 0.071(1.80)
0.041(1.05) 0.035(0.90)
0.006(0.15) 0.003(0.08)
0.100(2.55) 0.089(2.25)
0.020(0.50) 0.012(0.30)
Dimensions in inches and (millimeter)
Maximum Ratings ( Ta=25 °C unless otherwise noted )
Parameter
Symbol
Drain-source voltage Gate-source voltage
VDS VGS
Continuous drain current Drain current-pulsed (note 1) Power dissipation Thermal resistance from Junction to ambient (note 2) Junction temperature Storage temperature
ID IDM PD RΘJA TJ TSTG
Value 30 ±12 5.8...
