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CJ3407 - MOSFETS

Datasheet Summary

Description

The CJ3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge.

This device is suitable for use as a load switch or in PWM applications.

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Datasheet Details

Part number CJ3407
Manufacturer JCST
File Size 172.54 KB
Description MOSFETS
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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3407 P-Channel Enhancement Mode Field Effect Transistor General Description The CJ3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications. MARKING: 3407 SOT-23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VDS VGS ID PD RθJA TJ Tstg Value -30 ±20 -4.
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