CJ3400
FEATURE z High dense cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability
MARKING: R0
SOT-23
1. GATE 2. SOURCE 3. DRAIN
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Drain Current-Pulsed (note 1) Power Dissipation Thermal Resistance from Junction to Ambient (note 2) Junction Temperature Storage Temperature
Symbol
VDS VGS ID IDM PD RθJA TJ TSTG
Value
30 ±12 5.8 30 350 357 150 -55~+150
Unit
V V A A m W ℃/W
℃ ℃
A,Dec,2010
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Off Characteristics Drain-source breakdown voltage Zero gate voltage drain current Gate-source leakage current
V(BR) DSS IDSS IGSS
VGS = 0V, ID =250µA VDS =24V,VGS = 0V VGS =±12V, VDS =...
