JCST CJ3400
N-Channel Enhancement Mode Field Effect Transistor
| Part No. | CJ3400 |
|---|---|
| Datasheet | CJ3400 Download |
| Manufacturer |  JCST |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3400 N-Channel Enhancement Mode Field Effect Transistor FEATURE z High dense cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability MARKING: R0 SOT-23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Drain Current-Pulsed (note 1) Power Dissipation Thermal Resistance from Junction to Ambient (note 2) Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD RθJA TJ TSTG Value 30 ±12 5.8 30 350 357 150 -55~+150 Unit V V A A mW ℃/W ℃ ℃ A,Dec,2010 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Off Characteristics Drain-source breakdown voltage Zero gate voltage drain current Gate-source leakage current V(BR) DSS IDSS IGSS VGS = 0V, ID =250µA VDS =24V,VGS = 0V VGS =±12V, VDS = 0V
