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CJ3406 - MOSFETS

Datasheet Summary

Description

RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

1.

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Datasheet Details

Part number CJ3406
Manufacturer JCST
File Size 98.74 KB
Description MOSFETS
Datasheet download datasheet CJ3406 Datasheet
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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3406 N-Channel Enhancement Mode Field Effect Transistor DESCRIPTION The CJ3406 use advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. SOT-23 1. GATE 2. SOURCE 3. DRAIN MARKING: R6 Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Drain Current-Pulsed (note 1) Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD RθJA TJ TSTG Value 30 ±20 3.6 15 0.
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