• Part: CJ3406
  • Description: MOSFETS
  • Category: MOSFET
  • Manufacturer: JCST
  • Size: 98.74 KB
Download CJ3406 Datasheet PDF
JCST
CJ3406
DESCRIPTION The CJ3406 use advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. SOT-23 1. GATE 2. SOURCE 3. DRAIN MARKING: R6 Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Drain Current-Pulsed (note 1) Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD RθJA TJ TSTG Value 30 ±20 3.6 15 0.35 357 150 -55~ +150 Unit W ℃/W ℃ ℃ A,Dec,2010 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =24V,VGS =...