HM3400KR Datasheet | H&M Semiconductor

DESCRIPTION The HM3400KR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. APPLICATIONS - Power Management in Note book - Portable Equipment - Battery Powered System - Load Switch - FEATURES - RDS(ON)= 450 mΩ @VGS=4.5V - RDS(ON)= 550 mΩ @VGS=2.5V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability - Capable doing Cu wire bonding N-Channel 3D G1 2S Marking and pin Assignment SOT-323 top view Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Maximum Ratings 30 ±10 Unit V V - Th Nov, 2013-Ver1.0 N-Channel 30V (D-S) MOSFET Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS...