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HM3400PR Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

HM3400PR Overview

The HM3400PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.

HM3400PR Key Features

  • VDS = 30V,ID = 6.8A RDS(ON) < 60mΩ @ VGS=2.5V RDS(ON) < 44mΩ @ VGS=4.5V RDS(ON) < 33mΩ @ VGS=10V
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package

HM3400PR Distributor