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Dynex Semiconductor

GP200MHS12 Datasheet Preview

GP200MHS12 Datasheet

Half Bridge IGBT Module

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GP200MHS12
GP200MHS12
Half Bridge IGBT Module
Replaces GP200MHB12S January 1999 version, DS4339-5.5
FEATURES
s Non Punch Through Silicon
s Isolated Copper Baseplate
s Low Inductance Internal Construction
DS5296-1.5 November 2000
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
1200V
2.7V
200A
400A
APPLICATIONS
s High Power Inverters
s Motor Controllers
s Induction Heating
s Resonant Converters
The Powerline range of high power modules includes half
bridge and single switch configurations covering voltages from
600V to 3300V and currents up to 4800A.
The GP200MHS12 is a half bridge 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
11(C2)
1(E1C2)
9(C1)
2(E2)
6(G2)
7(E2)
3(C1)
5(E1)
4(G1)
Fig. 1 Half bridge circuit diagram
ORDERING INFORMATION
Order As:
GP200MHS12
Note: When ordering, please use the whole part number.
11
12
3
6
10 7
85
94
Outline type code: M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/10




Dynex Semiconductor

GP200MHS12 Datasheet Preview

GP200MHS12 Datasheet

Half Bridge IGBT Module

No Preview Available !

GP200MHS12
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
Test Conditions
VCES
V
GES
IC
IC(PK)
Pmax
Visol
Collector-emitter voltage
Gate-emitter voltage
VGE = 0V
-
Collector current
DC, Tcase = 72˚C
Peak collector current
1ms, T = 72˚C
case
Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C
Isolation voltage
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Max. Units
1200 V
±20 V
200 A
400 A
1490 W
2500 V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
Rth(j-c)
Thermal resistance - transistor (per arm)
Continuous dissipation -
junction to case
Rth(j-c)
Thermal resistance - diode (per arm)
Continuous dissipation -
junction to case
Rth(c-h)
Thermal resistance - case to heatsink (per module) Mounting torque 5Nm
(with mounting grease)
Tj Junction temperature
Transistor
Diode
T Storage temperature range
stg
- Screw torque
-
Mounting - M6
Electrical connections - M6
Min. Max. Units
- 84 ˚C/kW
- 160 ˚C/kW
- 15 ˚C/kW
- 150 ˚C
- 125 ˚C
–40 125 ˚C
- 5 Nm
- 5 Nm
2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com


Part Number GP200MHS12
Description Half Bridge IGBT Module
Maker Dynex Semiconductor
Total Page 10 Pages
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