GP200MHS12 module equivalent, half bridge igbt module.
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Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1200V 2.7V 200A.
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High Power Inverters Motor Controllers Induction Heating Resonant Converters
11(C2) 1(E1C2) 2(E2) 6(G2) 7(E2) 3.
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