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GP200MHS12 Datasheet - Dynex Semiconductor

Half Bridge IGBT Module

GP200MHS12 Features

* s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1200V 2.7V 200A 400A APPLICATIONS s s s s High Power Inverters Motor Controllers Induction Heating Resonant Converters 11(C2) 1(E1C2) 2(E2) 6(G

GP200MHS12 Datasheet (99.55 KB)

Preview of GP200MHS12 PDF

Datasheet Details

Part number:

GP200MHS12

Manufacturer:

Dynex Semiconductor

File Size:

99.55 KB

Description:

Half bridge igbt module.

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GP200MHS12 Half Bridge IGBT Module Dynex Semiconductor

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