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XTR1K1210 Datasheet High Temperature 10A 1200V SiC Schottky Diode

Manufacturer: EASii

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Datasheet Details

Part number XTR1K1210
Manufacturer EASii
File Size 438.13 KB
Description High Temperature 10A 1200V SiC Schottky Diode
Datasheet download datasheet XTR1K1210 Datasheet

General Description

XTR1K1210 is 10A, 1200V 4H-SiC junction barrier Schottky diode able to reliably operate from -60°C to +230°C, with junction temperature able to reach +250°C.

This diode has zero reverse recovery charge, which makes it ideally suited for high-frequency and high-efficiency power systems with minimum or no cooling requirements.

XTR1K1210 has been designed to reduce system cost and ease adoption.

Overview

XTR1K1210 High Temperature 10A, 1200V SiC Schottky Diode Data Sheet Rev 3 – June 2024 (DS-00275-12) PRODUCTION XTRPPPPP YYWWANN TO257-3.

Key Features

  • Reverse voltage up to 1200V.
  • Operational beyond the -60°C to +230°C temperature range.
  • Positive temperature coefficient for safe operation and ease paralleling.
  • Extremely fast switching not dependent on temperature.
  • Essentially no reverse or forward recovery.
  • Ruggedized thru-hole packages.

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