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XTR1K1210 - High Temperature 10A 1200V SiC Schottky Diode

Datasheet Summary

Description

XTR1K1210 is 10A, 1200V 4H-SiC junction barrier Schottky diode able to reliably operate from -60°C to +230°C, with junction temperature able to reach +250°C.

Features

  • Reverse voltage up to 1200V.
  • Operational beyond the -60°C to +230°C temperature range.
  • Positive temperature coefficient for safe operation and ease paralleling.
  • Extremely fast switching not dependent on temperature.
  • Essentially no reverse or forward recovery.
  • Ruggedized thru-hole packages.

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Datasheet Details

Part number XTR1K1210
Manufacturer EASii
File Size 438.13 KB
Description High Temperature 10A 1200V SiC Schottky Diode
Datasheet download datasheet XTR1K1210 Datasheet
Additional preview pages of the XTR1K1210 datasheet.

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Full PDF Text Transcription

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XTR1K1210 High Temperature 10A, 1200V SiC Schottky Diode Data Sheet Rev 3 – June 2024 (DS-00275-12) PRODUCTION XTRPPPPP YYWWANN TO257-3 XTR1K1210 FEATURES • Reverse voltage up to 1200V. • Operational beyond the -60°C to +230°C temperature range. • Positive temperature coefficient for safe operation and ease paralleling. • Extremely fast switching not dependent on temperature. • Essentially no reverse or forward recovery. • Ruggedized thru-hole packages. APPLICATIONS DESCRIPTION XTR1K1210 is 10A, 1200V 4H-SiC junction barrier Schottky diode able to reliably operate from -60°C to +230°C, with junction temperature able to reach +250°C.
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