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XTR2N0500 - High Temperature 35V P-Channel Power MOSFET

General Description

XTR2N0500 is a family of 35V P-channel power MOSFETs designed to reliably operate over a wide range of temperatures.

Full functionality is guaranteed from -60°C to +230°C, though operation well below and above this temperature range is achieved.

Key Features

  • Minimum BVDSS =-40V.
  • Allowed VGS range.
  • 5.5V to +5.5V.
  • Operational beyond the -60°C to +230°C temperature range.
  • Low RDS(on) o XTR2N0525: 2.3 Ω @ 230°C o XTR2N0550: 1.1 Ω @ 230°C.
  • Maximum Peak ID: o XTR2N0525: 5.3 A @ 230°C o XTR2N0550: 11.7 A @ 230°C.
  • On-time (td(on)+tr): o XTR2N0525: 26 nsec @ 230°C o XTR2N0550: 31 nsec @ 230°C.
  • Off-time (td(off)+tf): o XTR2N0525: 76 nsec @ 230°C o XTR2N0550: 91 nsec @ 230°C.
  • R.

📥 Download Datasheet

Datasheet Details

Part number XTR2N0500
Manufacturer EASii
File Size 630.51 KB
Description High Temperature 35V P-Channel Power MOSFET
Datasheet download datasheet XTR2N0500 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
XTR2N0500 High Temperature 35V P-Channel Power MOSFET Data Sheet Rev 5 – November 2023 (DS-00150-12) XTRPPPPP YYWWANN CDIP8 XTR2N0525 XTRPPPPP YYWWANN CDFP8 XTR2N0525 PRODUCTION FEATURES • Minimum BVDSS =-40V. • Allowed VGS range –5.5V to +5.5V. • Operational beyond the -60°C to +230°C temperature range. • Low RDS(on) o XTR2N0525: 2.3 Ω @ 230°C o XTR2N0550: 1.1 Ω @ 230°C • Maximum Peak ID: o XTR2N0525: 5.3 A @ 230°C o XTR2N0550: 11.7 A @ 230°C • On-time (td(on)+tr): o XTR2N0525: 26 nsec @ 230°C o XTR2N0550: 31 nsec @ 230°C • Off-time (td(off)+tf): o XTR2N0525: 76 nsec @ 230°C o XTR2N0550: 91 nsec @ 230°C • Ruggedized 3-lead TO257, 8-lead side brazed DIP and 8-lead gullwing flat pack with ePAD. • Also available as tested bare die.