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EIC discrete Semiconductors

SR26 Datasheet Preview

SR26 Datasheet

FAST RECOVERY SILICON SURFACE MOUNT

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www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686
SGS TH07/1033
SR26 - SR29
FAST RECOVERY
SILICON SURFACE MOUNT
PRV : 100 - 800 Volts
Io : 2.0 Amperes
SMB (DO-214AA)
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
* Pb / RoHS Free
1.14 ± 0.38
0.1 ± 0.1
2.1 ± 0.15
3.62 ± 0.32
0.22 ± 0.07
2.28 ± 0.15
MECHANICAL DATA :
* Case : SMB Molded plastic
* Epoxy : UL94V-0 rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.1079 gram
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Ta = 50 °C
Peak Forward Surge Current, 8.3ms Single half sine wave
Superimposed on rated load (JEDEC Method)
Maximum Peak Forward Voltage at IF = 2.0 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IF(AV)
IFSM
VF
IR
IR(H)
Trr
CJ
TJ
TSTG
SR26
100
70
100
Notes :
(1) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC.
Page 1 of 2
SR27 SR28
200 400
140 280
200 400
2.0
70
1.3
10
500
250
28
- 50 to + 125
- 50 to + 150
SR29
800
560
800
UNIT
V
V
V
A
A
V
μA
μA
ns
pF
°C
°C
Rev. 04 : September 28, 2012




EIC discrete Semiconductors

SR26 Datasheet Preview

SR26 Datasheet

FAST RECOVERY SILICON SURFACE MOUNT

No Preview Available !

www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686
SGS TH07/1033
RATING AND CHARACTERISTIC CURVES ( SR26 - SR29 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50 Ω
10 Ω
+
50 Vdc
(approx.)
D.U.T.
PULSE
GENERATOR
( NOTE 2 )
1 Ω OSCILLOSCOPE
( NOTE 1 )
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
+ 0.5 A
0
- 0.25 A
Trr
- 1.0 A
1 cm
SET TIME BASE FOR 50-100 ns/cm
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
2.5
2.0
1.5
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
100
80 8.3 ms SINGLE HALF SINE WAVE
Ta = 50 °C
60
1.0 40
0.5
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0 25 50 75 100 125
150
AMBIENT TEMPERATURE, ( °C)
175
20
0
12
4 6 10
20
40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
Pulse Width = 300 μs
2% Duty Cycle
TJ = 25 °C
10
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
10
TJ = 100 °C
1.0
1.0
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS
0.1
TJ = 25 °C
0.01 0
20 40 60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 04 : September 28, 2012


Part Number SR26
Description FAST RECOVERY SILICON SURFACE MOUNT
Maker EIC discrete Semiconductors
Total Page 2 Pages
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