• Part: EN29LV400A
  • Description: 4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory
  • Manufacturer: Elite Semiconductor Microelectronics Technology
  • Size: 426.71 KB
Download EN29LV400A Datasheet PDF
Elite Semiconductor Microelectronics Technology
EN29LV400A
EN29LV400A is 4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory manufactured by Elite Semiconductor Microelectronics Technology.
FEATURES - 3V, single power supply operation - Full voltage range: 2.7-3.6 volt read and write operations for battery-powered applications. - Regulated voltage range: 3.0-3.6 volt read and write operations for patibility with high performance 3.3 volt microprocessors. - High performance - Access times as fast as 45 ns - Low power consumption (typical values at 5 MHz) - 7 m A typical active read current - 15 m A typical program/erase current - 1 μA typical standby current (standard access time to active mode) - Flexible Sector Architecture: - One 16 K-byte, two 8 K-byte, one 32 K-byte, and seven 64 K-byte sectors (byte mode) - One 8 K-word, two 4 K-word, one 16 K-word and seven 32 K-word sectors (word mode) - Sector protection: - Hardware locking of sectors to prevent program or erase operations within individual sectors - Additionally, temporary Sector Unprotect allows code changes in previously locked sectors. - High performance program/erase speed - Byte/Word program time: 8µs typical - Sector erase time: 500ms typical - JEDEC Standard Embedded Erase and Program Algorithms - JEDEC standard DATA# polling and toggle bits feature - Single Sector and Chip Erase - Sector Unprotect Mode - Erase Suspend / Resume modes: Read or program another Sector during Erase Suspend Mode - triple-metal double-poly triple-well CMOS Flash...