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EPC

EPC2001 Datasheet Preview

EPC2001 Datasheet

Power Transistor

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eGaN® FET DATASHEET
EPC2001 – Enhancement Mode Power Transistor
VDSS , 100 V
RDS(ON) , 7 mW
ID , 25 A
NEW PRODUCT
EPC2001
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leverag-
ing the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high elec-
tron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure
and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that
can handle tasks where very high switching frequency, and low on-time are beneficial as well as
those where on-state losses dominate.
Maximum Ratings
Drain-to-Source Voltage (Continuous)
VDS Drain-to-Source Voltage (up to 10,000 5ms pulses at 125° C)
100
120
V
V
ID
Continuous (TA = 25˚C,θJA = 13)
Pulsed (25˚C, Tpulse = 300 µs)
25
100
A
VGS
Gate-to-Source Voltage
Gate-to-Source Voltage
6
-5
V
TJ Operating Temperature
TSTG Storage Temperature
-40 to 125
-40 to 150
˚C
PARAMETER
Static Characteristics (TJ= 25˚C unless otherwise stated)
BVDSS Drain-to-Source Voltage
IDSS Drain Source Leakage
IGSS
Gate-Source Forward Leakage
Gate-Source Reverse Leakage
VGS(th)
RDS(ON)
Gate Threshold Voltage
Drain-Source On Resistance
TEST CONDITIONS
VGS = 0 V, ID = 300 µA
VDS = 80 V, VGS = 0 V
VGS = 5 V
VGS = -5 V
VDS = VGS, ID = 5 mA
VGS = 5 V, ID = 25 A
Source-Drain Characteristics (TJ= 25˚C unless otherwise stated)
VSD
Source-Drain Forward Voltage
IS = 0.5 A, VGS = 0 V, T = 25˚C
IS = 0.5 A, VGS = 0 V, T = 125˚C
All measurements were done with substrate shorted to source.
Thermal Characteristics
MIN
100
0.7
RθJC Thermal Resistance, Junction to Case
RθJB Thermal Resistance, Junction to Board
RθJA Thermal Resistance, Junction to Ambient (Note 1)
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See http://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2013 |
EPC2001 eGaN® FETs are supplied only in
passivated die form with solder bars
Applications
• High Speed DC-DC conversion
• Class D Audio
• Hard Switched and High Frequency Circuits
Benefits
• Ultra High Efficiency
• Ultra Low RDS(on)
• Ultra low QG
• Ultra small footprint
TYP MAX UNIT
V
100 250 µA
1
0.2
5
1
mA
1.4 2.5 V
5.6 7 mΩ
1.75
1.8
V
TYP
2.1 ˚C/W
15 ˚C/W
54 ˚C/W
| PAGE 1




EPC

EPC2001 Datasheet Preview

EPC2001 Datasheet

Power Transistor

No Preview Available !

eGaN® FET DATASHEET
PARAMETER
Dynamic Characteristics (TJ= 25˚C unless otherwise stated)
CISS Input Capacitance
COSS Output Capacitance
CRSS Reverse Transfer Capacitance
QG Total Gate Charge (VGS = 5 V)
QGD Gate to Drain Charge
QGS Gate to Source Charge
QOSS Output Charge
QRR Source-Drain Recovery Charge
All measurements were done with substrate shorted to source.
TEST CONDITIONS
VDS = 50 V, VGS = 0 V
VDS = 50 V, ID = 25 A
VDS = 50 V, VGS = 0 V
EPC2001
MIN TYP MAX UNIT
850 950
450 525 pF
20 30
8 10
2.2 2.7
2.3 2.8 nC
35 40
00
Figure 1: Typical Output Characteristics
100
90
80
70 VGS = 5
60 VGS = 4
50
VGS = 3
VGS = 2
40
30
20
10
0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VDS – Drain to Source Voltage (V)
Figure 3: RDS(on) vs VGS for Various Current
20
18
16
14
12
10
8
6
4
2
0 2 2.5 3
3.5 4
4.5
VGS – Gate to Source Voltage (V)
ID = 10 A
ID = 20 A
ID= 40 A
ID= 80 A
5 5.5
Figure 2: Transfer Characteristics
100
25˚C
125˚C
80
VDS = 3V
60
40
20
0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VGS – Gate-to-Source Voltage (V)
Figure 4: RDS(on) vs VGS for Various Temperature
20
15
25˚C
125˚C
ID = 25 A
10
5
0 2 2.5
3 3.5
4 4.5 5 5.5
VGS – Gate-to-Source Voltage (V)
Figure 5: Capacitance
Figure 6: Gate Charge
EPC –1.E4FFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYR5IGHT 2013 |
COSS = CGD + CSD
4.5 ID = 25 A
| PAGE 2


Part Number EPC2001
Description Power Transistor
Maker EPC
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EPC2001 Datasheet PDF






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