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EPC

EPC2001C Datasheet Preview

EPC2001C Datasheet

Power Transistor

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eGaN® FET DATASHEET
EPC2001C – Enhancement Mode Power Transistor
VDS , 100 V
RDS(on) , 7 mΩ
ID , 36 A
D
G
S
EPC2001C
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very
low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG
and zero QRR. The end result is a device that can handle tasks where very high switching frequency,
and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings
PARAMETER
VALUE
UNIT
Drain-to-Source Voltage (Continuous)
100
VDS Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C)
120
V
ID
Continuous (TA = 25°C, RθJA = 7.3)
Pulsed (25°C, TPULSE = 300 µs)
Gate-to-Source Voltage
VGS Gate-to-Source Voltage
36
A
150
6
V
-4
TJ Operating Temperature
TSTG Storage Temperature
-40 to 150
°C
-40 to 150
Thermal Characteristics
PARAMETER
TYP
UNIT
RθJC Thermal Resistance, Junction-to-Case
1
RθJB Thermal Resistance, Junction-to-Board
2
°C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1)
54
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
PARAMETER
Static Characteristics (TJ = 25°C unless otherwise stated)
TEST CONDITIONS
BVDSS
IDSS
Drain-to-Source Voltage
Drain-Source Leakage
VGS = 0 V, ID = 300 μA
VGS = 0 V, VDS = 80 V
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
VGS = 5 V
VGS = -4 V
VGS(TH)
Gate Threshold Voltage
VDS = VGS, ID = 5 mA
RDS(on)
Drain-Source On Resistance
VGS = 5 V, ID = 25 A
VSD
Source-Drain Forward Voltage
All measurements were done with substrate connected to source.
IS = 0.5 A, VGS = 0 V
EPC2001C eGaN® FETs are supplied only in
passivated die form with solder bars
Applications
• High-Frequency DC-DC Conversion
• Industrial Automation
• Synchronous Rectification
• Class-D Audio
• Low Inductance Motor Drives
Benefits
• Ultra High Efficiency
• Ultra Low Switching and Conduction Losses
• Zero QRR
• Ultra Small Footprint
MIN TYP MAX
UNIT
100
V
100
250
µA
1
5
mA
0.1
0.25
0.8
1.4
2.5
V
5.6
7
mΩ
1.7
V
EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2020 |
|1




EPC

EPC2001C Datasheet Preview

EPC2001C Datasheet

Power Transistor

No Preview Available !

eGaN® FET DATASHEET
EPC2001C
Dynamic Characteristics (TJ = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
CISS
Input Capacitance
770
900
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS = 50 V, VGS = 0 V
430
650
10
15
RG
Gate Resistance
0.3
QG
Total Gate Charge
QGS
Gate-to-Source Charge
VDS = 50 V, VGS = 5 V, ID = 25 A
7.5
9
2.4
QGD
QG(TH)
Gate-to-Drain Charge
Gate Charge at Threshold
VDS = 50 V, ID = 25 A
1.2
2
1.6
QOSS
Output Charge
VDS = 50 V, VGS = 0 V
QRR
Source-Drain Recovery Charge
All measurements were done with substrate connected to source.
Note 2: COSS(ER) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 50% BVDSS.
Note 3: COSS(TR) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 50% BVDSS.
31
45
0
UNIT
pF
Ω
nC
Figure 1: Typical Output Characteristics at 25°C
150
120
90
Figure 2: Transfer Characteristics
150
25°C
125°C
120
VDS = 3 V
90
60
VGS = 5 V
VGS = 4 V
VGS = 3 V
30
VGS = 2 V
00
0.5
1
1.5
2
2.5
3
VDS – Drain-to-Source Voltage (V)
60
30
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VGS – Gate-to-Source Voltage (V)
Figure 3: RDS(on) vs. VGS for Various Currents
25
20
15
ID = 10 A
ID = 20 A
ID = 40 A
ID = 80 A
10
5
0
2
2.5
3
3.5
4
4.5
5
VGS – Gate-to-Source Voltage (V)
Figure 4: RDS(on) vs. VGS for Various Temperatures
25
25˚C
125˚C
20
ID = 25 A
15
10
5
0
2
2.5
3
3.5
4
4.5
5
VGS – Gate-to-Source Voltage (V)
EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2020 |
|2



Part Number EPC2001C
Description Power Transistor
Maker EPC
Total Page 3 Pages
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