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EPC

EPC2022 Datasheet Preview

EPC2022 Datasheet

Power Transistor

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eGaN® FET DATASHEET
EPC2022 – Enhancement Mode Power Transistor
VDS , 100 V
RDS(on) , 3.2 mΩ
ID , 90 A
D
G
S
EPC2022
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very
low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG
and zero QRR. The end result is a device that can handle tasks where very high switching frequency,
and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings
PARAMETER
VALUE
UNIT
Drain-to-Source Voltage (Continuous)
100
VDS Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C)
120
V
ID
Continuous (TA = 25°C, RθJA = 2.5°C/W)
Pulsed (25°C, TPULSE = 300 µs)
Gate-to-Source Voltage
VGS Gate-to-Source Voltage
TJ Operating Temperature
TSTG Storage Temperature
90
A
390
6
V
-4
-40 to 150
°C
-40 to 150
EPC2022 eGaN® FETs are supplied only in
passivated die form with solder bumps.
Die Size: 6.05 mm x 2.3 mm
• High Speed DC-DC Conversion
• Motor Drive
• Industrial Automation
• Synchronous Rectification
• Inrush Protection
• Class-D Audio
Thermal Characteristics
PARAMETER
TYP
UNIT
RθJC Thermal Resistance, Junction-to-Case
0.4
RθJB Thermal Resistance, Junction-to-Board
1.1
°C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1)
42
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
PARAMETER
Static Characteristics (TJ = 25°C unless otherwise stated)
TEST CONDITIONS
MIN TYP
MAX
BVDSS
IDSS
Drain-to-Source Voltage
Drain-Source Leakage
VGS = 0 V, ID = 0.9 mA
VDS = 80 V, VGS = 0 V
100
0.1
0.7
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
VGS = 5 V
VGS = -4 V
1
9
0.1
0.7
VGS(TH)
Gate Threshold Voltage
VDS = VGS, ID = 13 mA
0.8
1.4
2.5
RDS(on)
Drain-Source On Resistance
VGS = 5 V, ID = 25 A
2.4
3.2
VSD
Source-Drain Forward Voltage
All measurements were done with substrate connected to source.
IS = 0.5 A, VGS = 0 V
1.8
UNIT
V
mA
mA
mA
V
mΩ
V
EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2020 |
|1




EPC

EPC2022 Datasheet Preview

EPC2022 Datasheet

Power Transistor

No Preview Available !

eGaN® FET DATASHEET
EPC2022
Dynamic Characteristics (TJ = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN TYP
CISS
Input Capacitance
1400
COSS Output Capacitance
VDS = 50 V, VGS = 0 V
840
CRSS Reverse Transfer Capacitance
7
COSS(ER) Effective Output Capacitance, Energy Related (Note 2)
COSS(TR) Effective Output Capacitance, Time Related (Note 3)
VDS = 0 to 50 V, VGS = 0 V
1090
1410
RG
Gate Resistance
0.3
QG
Total Gate Charge
VDS = 50 V, VGS = 5 V, ID = 25 A
13
QGS Gate-to-Source Charge
3.4
QGD Gate-to-Drain Charge
VDS = 50 V, ID = 25 A
2.4
QG(TH) Gate Charge at Threshold
2.1
QOSS Output Charge
VDS = 50 V, VGS = 0 V
71
QRR
Source-Drain Recovery Charge
0
All measurements were done with substrate connected to source.
Note 2: COSS(ER) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 50% BVDSS.
Note 3: COSS(TR) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 50% BVDSS.
Figure 1: Typical Output Characteristics at 25°C
Figure 2: Transfer Characteristics
MAX
1690
1260
16
107
UNIT
pF
Ω
nC
25˚C
300
300
125˚C
VGS = 5 V
VDS = 3 V
VGS = 4 V
VGS = 3 V
200
VGS = 2 V
200
100
100
0
0
0.5
1.0
1.5
2.0
2.5
3.0
VDS – Drain-to-Source Voltage (V)
Figure 3: RDS(on) vs. VGS for Various Drain Currents
8
ID = 25 A
ID = 50 A
ID = 100 A
6
ID = 150 A
4
2
0
2.5
3.0
3.5
4.0
4.5
5.0
VGS – Gate-to-Source Voltage (V)
EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2020 |
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS – Gate-to-Source Voltage (V)
Figure 4: RDS(on) vs. VGS for Various Temperatures
8
25˚C
125˚C
VIDD=S =253 AV
6
4
2
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS – Gate-to-Source Voltage (V)
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Part Number EPC2022
Description Power Transistor
Maker EPC
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EPC2022 Datasheet PDF






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