EPC EPC2024
Power Transistor
| Part No. | EPC2024 |
|---|---|
| Datasheet | EPC2024 Download |
| Manufacturer |  EPC |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
PARAMETER VALUE UNIT Drain-to-Source Voltage (Continuous) 40 VDS Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) 48 V ID Continuous (TA = 25°C, RθJA = 6°C/W) Pulsed (25°C, TPULSE = 300 µs) Gate-to-Source Voltage VGS Gate-to-Source Voltage TJ Operating Temperature TSTG Storage Temperature 90 A 560 6 V -4 -40 to 150 °C -40 to 150 HAL Revised August 29, 2024 Die size: 6.05 x 2.3 mm EPC2024 eGaN® FETs are supplied only in passivated die form with solder bumps.APPLICATIONS
● High speed DC-DC conversion● Motor drive
● Industrial automation
● Synchronous rectification
● Inrush protection
● Point-of-Load (POL) converters Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 0.4 RθJB Thermal Resistance, Junction-to-Board 1.1 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 42 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See for details. Static Cha...
