EPC EPC2022
Power Transistor
| Part No. | EPC2022 |
|---|---|
| Datasheet | EPC2022 Download |
| Manufacturer |  EPC |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
PARAMETER VALUE UNIT Drain-to-Source Voltage (Continuous) 100 VDS Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) 120 V ID Continuous (TA = 25°C, RθJA = 2.5°C/W) Pulsed (25°C, TPULSE = 300 µs) Gate-to-Source Voltage VGS Gate-to-Source Voltage TJ Operating Temperature TSTG Storage Temperature 90 A 390 6 V -4 -40 to 150 °C -40 to 150 EPC2022 eGaN® FETs are supplied only in passivated die form with solder bumps. Die Size: 6.05 mm x 2.3 mm● High Speed DC-DC Conversion
● Motor Drive
● Industrial Automation
● Synchronous Rectification
● Inrush Protection
● Class-D Audio Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 0.4 RθJB Thermal Resistance, Junction-to-Board 1.1 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 42 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See for details. PARAMETER Static Characteristics (TJ = 25°C unless otherwise...
